Room-temperature photoluminescence spectra from a single quantum well were measured as a function of time at various photo-excitation levels (4 to 40W/cm2). The spectrally-integrated photoluminescence intensity increased with measurement time and reached a maximum that was 37 times higher than the initial intensity. This dynamic behavior was attributed to recombination-enhanced defect reactions in the vicinity of point defects. These reactions reduced the density of such defects and enhanced radiation quantum efficiency.

Dynamics of recombination-enhanced defect reactions in a ZnCdSe single quantum well M.Tang, K.Shum, L.Zeng, M.C.Tamargo: Applied Physics Letters, 1998, 73[11], 1541-3