Defects in Zn1-xMgxSe were studied by using deep-level transient spectroscopy. The crystalline material had a low Mg concentration (x = 0.09 or 0.15) and was obtained by using the high-pressure Bridgman method. It had a sphalerite structure and exhibited n-type conductivity. A major electron trap was found, with a thermal activation energy of 0.37eV (x = 0.09) or 0.38eV (x = 0.15). The trap concentration was between 1.5 x 1014 and 2.7 x 1014/cm3. The electron capture rate, as a function of temperature, provided information concerning thermal activation of the capture process. The capture barrier could be split into a high-temperature section of 0.145eV and a low-temperature section of 0.066eV. It was assumed that the predominant trap in this material had the same origin as the well-known 0.32eV trap in ZnSe.

A study of deep centers in Zn1-xMgxSe crystals using deep-level transient spectroscopy R.Beyer, H.Burghardt, F.Firszt, D.R.T.Zahn: Journal of Applied Physics, 1998, 84[9], 5345-7