The effect of electron beam irradiation upon several emissions from films which had been grown onto GaAs (001) was monitored by using low-temperature cathodoluminescence measurements and transmission electron microscopy. It was found that the intensity of the deep-level defect emission increased during irradiation, while those of other emissions decreased. It was suggested that the luminescence center of the defect emission acted as a non-radiative center for the others. The non-radiative centers were thought to be point defects which were created by electron-beam irradiation.

Deep-level emission in ZnS caused by electron beam irradiation T.Mitsui, N.Yamamoto: Japanese Journal of Applied Physics - 2, 1998, 37[11B], L1390-2