Capacitance-voltage and photoluminescence methods were used to investigate the effects of hydrogenation upon p-type ZnSe0.94S0.06 epilayers which had been grown onto n-type GaAs(100) substrates by molecular beam epitaxy. The results of the transmission electron microscopic measurements showed that the heterostructures had high-quality interfaces. After hydrogenation, the acceptor concentration of the ZnSeS had decreased due to acceptor neutralization that resulted from complexes which formed between H atoms, and Zn or Se vacancies. The photoluminescence spectra of the hydrogenated samples showed that the peak positions of the donor-acceptor pair and its phonon replicas shifted to higher energies, and that the donor-bound exciton peak appeared. The results indicated that the crystallinity of the epilayers was improved by hydrogenation.

Hydrogenation effects on the electrical and optical properties of p-type ZnSxSe1-x epilayers grown on GaAs(100) substrates T.W.Kim, M.D.Kim, H.S.Park: Solid State Communications, 1998, 108[8], 587-91