The temperature dependence of Pb diffusion was determined by measuring changes in the energy spectrum of α-particles from the decay chain of implanted 212Pb atoms. The diffusion rates were measured at temperatures of up to 900C. Higher rates were observed for diffusion in Si-doped samples than in semi-insulating samples (table 3).

Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy-loss method M.Adamcyk, M.Beaudoin, I.Kelson, Y.Levy, T.Tiedje: Journal of Applied Physics, 1998, 84[11], 6003-6

Table 3

Diffusivity of Pb in GaAs