The electrical and photoluminescence properties of heavily Zn-doped layers, grown by means of liquid-phase epitaxy from Ga and Bi solutions, were studied. It was shown that a new line at 1.35eV appeared in the low-temperature photoluminescence spectra of layers which were doped to more than 1019/cm3. This line was associated with a new defect. The concentration of defects increased, with doping level, in proportion to the concentration of free holes raised to the power of 5.35. The latter exponent was independent of the growth solution which was used (Ga or Bi) and of the growth temperature. It was found that the defect was a neutral complex which consisted of GaAs native point defects: an antisite defect of Ga in an As site, plus two As vacancies.

New impurity-induced defect in heavily zinc-doped GaAs grown by liquid-phase epitaxy T.S.Shamirzaev, K.S.Zhuravlev, N.A.Yakusheva, I.P.Petrenko: Semiconductor Science and Technology, 1998, 13[10], 1123-9