The activation of implanted Si, and the distribution of implantation-induced vacancy defects, was studied by means of automated differential Hall measurements and positron annihilation spectroscopy. A marked effect of implantation damage upon the activation of carriers was observed, thus suggesting that 2 independent activation mechanisms occurred; depending upon the defect concentration. An activation energy of 0.53eV was measured for the total sheet n-type carrier concentration whereas the activation energy was equal to 1.4eV for carriers in the first 0.6μ. The vacancy defects which were detected by means of positron annihilation measurements began to anneal out at temperatures below 900C. However, residual defects remained even after annealing at 1000C. This work emphasized the need to measure depth-resolved, rather than depth-averaged, data.

A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs A.P.Knights, R.Apiwatwaja, R.Gwilliam, B.J.Sealy, P.G.Coleman: Semiconductor Science and Technology, 1998, 13[11], 1266-71