High-quality GaAs epilayers on (100)Si substrates, with dislocation densities of 1.2 x 106/cm2, were obtained by inserting an InGaAs strained interlayer and using thermal-cycle annealing. All of the layers were grown by using low-pressure metalorganic vapor-phase epitaxy. The threading dislocation density near to the surface of 4μ-thick GaAs was measured by means of plan-view transmission electron microscopy. The threading dislocation density was found to be very sensitive to the In composition of the interlayer and to the cyclic annealing parameters.

Reduction of threading dislocations by an InGaAs interlayer in GaAs layers grown on Si substrates Y.Takano, M.Hisaka, N.Fujii, K.Suzuki, K.Kuwahara, S.Fuke: Applied Physics Letters, 1998, 73[20], 2917-9