A depth-resolved cathodoluminescence and transmission electron microscopic study was made of autodoped material which had been grown on sapphire. Depth-resolved cathodoluminescence analysis could be used to depth-profile the yellow luminescence center concentration. The latter was found to increase with depth. The results were consistent with a (ON-VGa)2- complex model for the yellow luminescence center. Depth-profiling of near-edge emission in layers which were thicker than about 0.5μ was not possible, due to strong self-absorption.

Depth profiling of GaN by cathodoluminescence microanalysis K.Fleischer, M.Toth, M.R.Phillips, J.Zou, G.Li, S.J.Chua: Applied Physics Letters, 1999, 74[8], 1114-6