Thick (225nm) InxGa1-xN layers which had been grown onto 5μ-thick GaN were found, using X-ray diffraction measurements, to be pseudomorphic up to x = 0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the interface. The composition of the overlayers was determined by means of Rutherford back-scattering spectrometry and was correlated with the a and c lattice constants. It was found that Vegard's law was applicable at these compositions, if the effect of biaxial strain was included.

Structural and optical properties of pseudomorphic InxGa1-xN alloys L.T.Romano, B.S.Krusor, M.D.McCluskey, D.P.Bour, K.Nauka: Applied Physics Letters, 1998, 73[13], 1757-9