Samples of n-type epitaxial material were diffused with Pt (300 to 800C, 0.5h) during 2MeV electron irradiation to a dose of 1017/cm2. The samples were then characterized by means of capacitance-voltage measurements and deep-level transient spectroscopy. It was noted that samples which were irradiated at 500, 600 or 700C could be analyzed, whereas compensation in the others was too high. Most of the observed deep levels were characterized by using the Arrhenius method. The deep level of substitutional Pt first appeared in samples which were irradiated at 600C, and was the predominant defect-level at even higher temperatures. It was observed that, at 17μ from the sample surface, the concentration of electrically active Pt, after irradiation at 700C, was 1000 times higher than that in a normally diffused sample. By taking account of experiments where Pt was diffused into pre-irradiated samples, the observed behavior could be attributed to a reduced correlated recombination of interstitials and vacancies.

2MeV electron irradiation of silicon at elevated temperatures D.C.Schmidt, B.G.Svensson, J.L.Lindström, S.Godey, E.Ntsoenzok, J.F.Barbot, C.Blanchard: Journal of Applied Physics, 1999, 85[7], 3556-60