Deep-level transient spectroscopic investigations were made of a Pt-related mid-gap state which corresponded to Ec-0.52eV. Upon irradiating Pt-doped samples with high-energy (1.1MeV) γ-rays, it was observed that the concentration of the mid-gap state increased and obeyed a quadratic dependence upon irradiation dose. However, the concentration of the acceptor which corresponded to Ec-0.28eV remained constant. Studies of passivation by atomic H, and thermal reactivation, revealed that the Ec-0.52eV level reappeared in samples which were annealed at high temperatures after hydrogenation. The interaction of Pt with various defects, and qualitative arguments which were based upon the law of mass action, suggested that the Pt-related mid-gap defect might be an interstitial-Pt plus divacancy complex.

Identification of the nature of platinum-related mid-gap state in silicon by deep-level transient spectroscopy K.S.R.K.Rao, S.V.P.Rangaiah, P.N.Reddy, B.P.N.Reddy: Journal of Applied Physics, 1999, 85[4], 2175-8