A faceted {211}-{211} Σ = 3 twin boundary in polycrystalline material was observed for the first time by using transmission electron microscopy. The facets were crystallographically equivalent regions of interface, and the boundary exhibited dislocations along the facet junction lines. The defects were characterized a priori by using the topological theory of line defects in interfaces. The dislocations were imaged under dark-field conditions, using common reflections which were weak in intensity. Image simulation was used for the purpose of comparison with theoretical predictions. Good agreement was achieved.

Interfacial dislocations at the junction lines of {211} micro-facets of a twin boundary in silicon P.Komninou, G.P.Dimitrakopulos: Philosophical Magazine A, 1998, 78[2], 255-72