Photoluminescence in nanoporous material which was doped with Er was studied. An analysis was made of the 2 types of optically active Er center which appeared in electrochemically doped porous material; with sharp and intense lines at 1.548 and 1.539μ, respectively. A feature which was characteristic of spin-on doping was an intense dislocation-related photoluminescence at 1.53μ. A high-temperature photoluminescence which was observed at up to 360K was attributed to Er centers that were incorporated into a silica-like matrix at the oxidized surface of electrochemically doped porous material.

1.5μm infrared photoluminescence phenomena in Er-doped porous silicon M.Stepikhova, L.Palmetshofer, W.Jantsch, H.J.Von Bardeleben, N.V.Gaponenko: Applied Physics Letters, 1999, 74[4], 537-9