Dislocation sub-structures in β-phase nitride were studied, by means of transmission electron microscopy, using samples which had been deformed in confined compression at 850C. Operation of the glide systems, [00•1]{1¯1•0} and [00•1]{11•0}, was detected. The velocity of edge dislocations was found to be greater than that of screw dislocations for both types of glide system. Cross-slip events between the 2 glide systems, as well as a high Peierls stress along [00•1], could be related to a sessile core structure of the screw dislocations. That is, [00•1] was a ternary axis of the crystal, and the core structure of screw dislocations could extend onto {1¯1•0} and {11•0} planes.

Glide dislocations in β silicon nitride X.Milhet, J.L.Demenet, J.Rabier: Philosophical Magazine Letters, 1999, 79[1], 19-24