The O transport process in c-axis oriented thin films was investigated in real time, during deposition and post-deposition oxidation, using in situ spectroscopic ellipsometry. Two transport regimes, dominated by O out-diffusion and in-diffusion were observed; during deposition by ion beam sputtering at 700C. The effect of the O partial pressure upon the extent of oxidation of as-deposited films was also studied during post-deposition cooling. The thermodynamic stability of the grown films was examined by means of real-time spectroscopic ellipsometry during the post-annealing process. The relaxation time for O diffusion was found to decrease with increasing O partial pressure.

Real-Time Study of Oxygen in c-Axis Oriented YBa2Cu3O7 Thin Films using in situ Spectroscopic Ellipsometry. Y.Gao, A.H.Mueller, S.A.Irene, O.Auciello, A.R.Krauss, J.A.Schultz: Journal of Applied Physics, 1999, 86[12], 6979-84