Resistance changes of thin films during deposition were studied at substrate temperatures of between 560 and 700C. The form of the time dependence of the resistivity, and the deposition rates, indicated that the films grew epitaxially on the (100) surface of a SrTiO3 substrate at 700C. Isothermal O diffusion, along the c-axis direction in epitaxially grown thin films, was investigated by means of  in situ  monitoring of changes in resistivity at temperatures ranging from 450 to 600C. It was found that the apparent diffusion coefficients ranged from 3.1 x 10-11 to 6.3 x 10-11cm2/s.

S.H.Lee, S.C.Bae, J.K.Ku, H.J.Shin: Physical Review B, 1992, 46[14], 9142-6