The oxide-ion conductivities of Ga-based perovskite-type oxides were investigated. Doped perovskite-type oxides such as GaLaO3 exhibited high conductivities, and the transference number of the oxide ion was greater than 0.9 at O partial pressures ranging from 1 to 10-21atm.

T.Ishihara, H.Matsuda, M.Azmi bin Bustam, Y.Takita: Solid State Ionics, 1996, 86-88[1], 197-201