It was recalled that In-based transparent conducting oxides shared the usual defect structure of indium-tin oxide: that is, electrons, isolated SnIn donors and neutral associates which were believed to be (2SnIn0i”)x. Calculated Brouwer diagrams as a function of O partial pressure and dopant concentration were presented, as well as intermediate-temperature data on thermopower and conductivity as a function of O partial pressure and Sn concentration. This was done for polycrystalline bulk indium-tin oxide, nanocrystalline indium-tin oxide and the present ternary compound. The effect of non-reducible Sn-O complexes at high doping levels was identified for indium-tin oxide.

Point Defects and Electrical Properties of Sn-Doped In-Based Transparent Conducting Oxides. J.H.Hwang, D.D.Edwards, D.R.Kammler, T.O.Mason: Solid State Ionics, 2000, 129[1-4], 135-44