The migration of ion-implanted As was studied in samples which were annealed in flowing N2 gas. It was found that, at concentrations below 1020/cm3, the As diffused 20 times faster at 1100C than it did under an oxidizing atmosphere. The effective activation energy for fast diffusion was 0.71eV. This contrasted markedly with the values of 4.3 and 4.0eV which were found for diffusion under O2 and O2/H2O atmospheres, respectively. The fast-diffusing species was suggested to consist of As atoms which occupied either the O site or interstitial sites of SiO2.

S.T.Lee, P.Fellinger: Applied Physics Letters, 1988, 53[3], 189-91