The diffusivity of D2O in various dielectric films was deduced by measuring depth profiles by means of secondary ion mass spectrometry. The films which were investigated were chemical vapor deposited SiO2, borophosphosilicate glass, plasma chemical vapor deposited SiO2, tetraethoxysilicate-based plasma-enhanced chemical vapor deposited SiO2, and organic spun-on glass films. It was found that the diffusivity of D2O in the plasma chemical vapor deposited SiO2 film was less than 20% of that in the other films.

K.Fukuda, T.Nakano, M.Fujishima, N.Mura, K.Tokunaga, S.Ichinose: Japanese Journal of Applied Physics - 2, 1994, 33[10B], L1445-8

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