Thin films of the oxide were decomposed under an ultra-high vacuum, at temperatures of between 760 and 850C (figure 7). By measuring the remaining oxide thickness as a function of time, it was possible to deduce the diffusivity of SiO. It was found that the results could be described by:

D (cm2/s) = 0.00148 exp[-3.2(eV)/kT]

H.E.Sasse, U.König: Journal of Applied Physics, 1990, 67[10], 6194-6

Figure 7

Diffusivity of SiO in SiO2