Selective epitaxial growth of GaAs was carried out by metalorganic chemical vapor deposition at atmospheric pressure, using W and SiO2 masks. A deposition-free region was clearly observed along the edge of the masks. The surface concentration of the reactant species on the masks was analyzed by using a surface diffusion model, and a new method was proposed for estimating the surface diffusion length. The surface diffusion lengths on the SiO2 and W masks were 0.45 and 0.07, respectively, at 610C. The surface diffusion length increased upon decreasing the substrate temperature, and became longer on masks which had been ion-bombarded.

K.Yamaguchi, M.Ogasawara, K.Okamoto: Journal of Applied Physics, 1992, 72[12], 5919-25