Direct diffusion measurements were performed on amorphous thin films of 4%P2O5 silicate glass. Thin films which were 0.5 thick were grown onto oxidized Si wafers by using a chemical vapor deposition technique. The study involved the use of 67Cu radiotracer diffusion techniques combined with micro-depth profiling by sputtering with neutral Ar atoms with energies of 400 to 500eV. The diffusivity of 67Cu in the glass (table 125), at temperatures ranging from 227 to 550C, could be described by:

D (cm2/s) = 5.3 x 10-11exp[-0.5(eV)/kT]

D.Gupta, K.Vieregge, K.V.Srikrishnan: Applied Physics Letters, 1992, 61[18], 2178-80

Table 125

Diffusion of 67Cu in SiO2-4%P2O5 Glass