Thin films were prepared by radio-frequency sputtering. The relationship between deposition conditions (sputtering power, total sputtering pressure, O partial pressure) and ionic resistivities was evaluated. It was found that the proton conductivities varied from 3.3 x 10-6 to less than 10-10S/cm. The activation energy for ion motion varied from 0.25 to 0.4eV, and increased exponentially with the optical absorption coefficient of the films. Variations in the ionic conductivities were attributed to changes in the carrier concentrations and mobilities.

M.J.Duggan, T.Saito, T.Niwa: Solid State Ionics, 1993, 62[1-2], 15-20