The incorporation of D, and its thermal stability in 6H-type crystals, was studied. The D was introduced either by implantation or by plasma treatment. The implantation of D was performed by using an energy of 100keV and a fluence of 2 x 1015/cm2. In as-implanted samples, a classical profile with a D density of about 1020/cm3 at a depth of about 0.75 was revealed by secondary ion mass spectrometry. Other samples were exposed to a D plasma (300C, 0.5h). It was found that, whereas the secondary ion mass spectrometric profiles of plasma-treated samples exhibited a D peak density (1020/cm3) at the surface, the background level of D was reached within less than 0.1. The samples were furnace annealed under flowing N at temperatures of up to 1000C and it was noted that, in contrast to Si and III-V materials, no significant D redistribution occurred in implanted crystals during annealing. In the case of plasma-treated samples, annealing led to a significant reduction in D.

J.M.Zavada, R.G.Wilson, F.Ren, S.J.Pearton, R.F.Davis: Solid-State Electronics, 1997, 41[5], 677-9