Thin films were grown onto 6H-type SiC substrates by means of gas-source molecular beam epitaxy at 1050C. Step flow, step bunching and the deposition of 6H-SiC occurred at the beginning of exposure of the 1x1 vicinal substrate surface to C2H4/Si2H6 gas-flow ratios of 1, 2 or 10. A 3x3 surface reconstruction which was observed was believed to enhance the diffusion lengths of adatoms which, in turn, promoted step-flow growth.

R.F.Davis, S.Tanaka, L.B.Rowland, R.S.Kern, Z.Sitar, S.K.Ailey, C.Wang: Journal of Crystal Growth, 1996, 164, 132-42