Direct diffusion measurements were performed on amorphous thin films of hydrogenated nitride. Thin films which were 0.5 thick were grown onto oxidized Si wafers by using a chemical vapor deposition technique. The study involved the use of 67Cu radiotracer diffusion techniques combined with micro-depth profiling by sputtering with neutral Ar atoms with energies of 400 to 500eV. The diffusivity of 67Cu in the nitride with 16at%H (table 160), at temperatures ranging from 227 to 550C, could be described by:

D (cm2/s) = 4 x 10-6exp[-1.1(eV)/kT]

D.Gupta, K.Vieregge, K.V.Srikrishnan: Applied Physics Letters, 1992, 61[18], 2178-80

Table 160

Diffusion of 67Cu in SiN-16%H