An investigation was made of the effects of F upon B diffusion in thin films which were used for metal-oxide semiconductor structures. Secondary ion mass spectroscopy was used to measure the B penetration profile, from p+-type polycrystalline Si into a Si substrate (via the oxide film), for various F doses. Experimental and simulated results were compared in order to determine the B diffusion coefficients. It was found that the diffusion coefficients exhibited an Arrhenius behavior for each F dose. The F had an enhancing effect. In the absence of F, the diffusion coefficients were independent of the oxide thickness.

T.Aoyama, K.Suzuki, H.Tashiro, Y.Toda, T.Yamazaki, K.Takasaki, T.Ito: Journal of Applied Physics, 1995, 77[1], 417-9