Films of plasma-deposited material were annealed, at temperatures ranging from 800 to 1000C, in D2/N2 gas mixtures. The H and D depth profiles were studied by means of elastic recoil detection and Fourier transform infra-red absorption spectroscopy. The diffusion of H appeared to be very fast in as-deposited samples. In the case of pre-annealed samples, the diffusion rate appeared to decrease to between 10-12 and 10-13cm2/s at temperatures of between 900 and 1000C. The diffusivity increased with O/(O+N) concentration ratios of more than 0.3.

W.M.Arnoldbik, C.H.M.Marée, F.H.P.M.Habraken: Applied Surface Science, 1994, 74, 103-13