The diffusivity was studied in film samples that had been prepared by the reactive evaporation of Ti (in N2 atmospheres) onto Si substrates, followed by the evaporation of pure Fe. The Fe diffusion profiles were investigated by means of 2MeV 4He+ Rutherford back-scattering spectroscopy, after annealing at temperatures of up to 600C. The diffusivity, at temperatures of between 200 and 600C, could be described by:

D (m2/s) = 1.4 x 10-15exp[-46/RT]

These values were rather high when compared with the diffusivities of other species, such as Si or Al, in TiN films.

G.I.Grigorov, K.G.Grigorov, M.Stojanova, J.L.Vignes, J.P.Langeron, P.Denjean, L.Ranno: Physica C, 1995, 241[3-4], 397-400