The migration of 15N, which had been implanted into non-stoichiometric TiN1-x monocrystals, was studied at temperatures of between 700 and 1400C. The concentration profiles were measured by means of secondary ion mass spectrometry, and the diffusion coefficients were deduced by fitting Gaussian profiles. It was found that the diffusivity data (table 162) could be described by:

D (cm2/s) = 4 x 10-7 exp[-2.26(eV)/kT]

in layers which were close to the surface (high tracer concentration). In deeper layers, the data were described by:

D (cm2/s) = 1.3 x 10-8 exp[-1.65(eV)/kT]

F.Abautret, P.Eveno: Revue de Physique Appliquée, 1990, 25[11], 1113-9

 

 

 

Table 162

Diffusion of 15N in TiN

 

Layer

Temperature (C)

D (cm2/s)

shallow

850

7.3 x 10-17

deep

850

1.33 x 10-15

shallow

900

1.53 x 10-16

deep

900

1 x 10-15

shallow

1000

5.7 x 10-16

deep

1000

1.44 x 10-15

shallow

1085

3.11 x 10-15

deep

1085

7.94 x 10-15

shallow

1100

3.1 x 10-15

deep

1100

4.5 x 10-15

shallow

1110

4.15 x 10-15

deep

1110

6.7 x 10-15

shallow

1150

8 x 10-15

deep

1150

2.13 x 10-14

shallow

1230

1.58 x 10-14

deep

1230

3.68 x 10-14

shallow

1300

3.6 x 10-14

deep

1300

6.85 x 10-14

shallow

1400

1.51 x 10-13

deep

1400

2.31 x 10-13