The effects of N and C ion implantation upon the devitrification of stoichiometric and O-deficient silica glasses were investigated. Linear crystal growth was observed in stoichiometric silica glass, and was not affected by ion implantation. Parabolic crystal growth was observed in O-deficient glasses, and was retarded by ion implantation. The rate of crystal growth retardation was greater for N implantation than for C implantation. The activation energy for parabolic crystal growth was about 105kcal/mol. When O-deficient silica glasses were hydrated, their crystal growth became linear and the activation energies were lower. The reduction in activation energy due to hydration was approximately equal to the activation energy for H2O diffusion in silica. It was suggested that N ion implantation decreased the crystal growth rate of O-deficient glasses by forming an oxynitride layer. The latter was an effective H2O diffusion barrier.

H.Li, M.Tomozawa, V.K.Lou: Journal of Non-Crystalline Solids, 1993, 168[1-2], 56-63