The formation of vacancy-type defects in La-doped lead zirconate titanate thin films, where the Zr/Ti ratio was 20:80, was studied as a function of La content after cooling in a reduced-O ambient. The changes in the Doppler-broadening S-parameter were consistent with the progressive introduction of Pb vacancies as a result of La-doping. The cooling of thin films with 0 or 10%La, under an O partial pressure of 10-5Torr after growth, led to an increase in the number density of vacancy-type defects; as compared with films which were cooled under atmospheric pressure. It was suggested that the defects which were formed were probably cation-O vacancy complexes.

A Study of Vacancy-Related Defects in (Pb,La)(Zr,Ti)O3 Thin Films using Positron Annihilation. T.Friessnegg, S.Aggarwal, B.Nielsen, R.Ramesh, D.J.Keeble, E.H.Poindexter: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2000, 47[4], 916-20