Measurements of the diffusion of 110mAg in alloys containing up to 4.5at%Sn were performed at temperatures ranging from 618 to 654K. Serial sectioning was carried out by means of ion-beam sputtering. It was found that there occurred a marked non-linear enhancement of the solvent diffusion as a result of alloying (table 10). The Gibbs free energy for vacancy-impurity binding was deduced from the diffusion results (table 11). A comparison with published data showed that this free energy decreased appreciably with decreasing temperature. The value of 0.20eV at 1000K was in good agreement with results which had been obtained via measurements of absolute vacancy concentrations.

D.Hentrich, F.Faupel, T.Hehenkamp: Philosophical Magazine A, 1992, 65[1], 207-14

 

 

 

Table 10

Diffusion of 110mAg in Ag-Sn Alloys

 

Sn (at%)

Temperature (K)

D (cm2/s)

0

618

8.35 x 10-17

0.80

618

1.97 x 10-16

1.25

618

2.76 x 10-16

1.80

618

3.84 x 10-16

3.04

618

7.74 x 10-16

3.44

618

8.51 x 10-16

0

629

3.40 x 10-16

0.54

629

3.01 x 10-16

1.15

629

8.34 x 10-16

1.73

629

8.35 x 10-16

2.23

629

1.13 x 10-15

2.59

629

1.19 x 10-15

2.85

629

1.07 x 10-15

4.56

629

2.68 x 10-15

0

643

8.23 x 10-16

0.49

643

9.45 x 10-16

0.80

643

8.53 x 10-16

1.70

643

1.70 x 10-15

2.03

643

1.93 x 10-15

2.54

643

2.39 x 10-15

3.04

643

2.73 x 10-15

0

652

1.40 x 10-15

0.49

652

1.44 x 10-15

0.80

652

1.38 x 10-15

1.25

652

3.33 x 10-15

1.80

652

2.61 x 10-15

2.03

652

5.18 x 10-15

2.54

652

3.11 x 10-15

3.04

652

4.37 x 10-15

3.44

652

7.18 x 10-15

0

654

1.09 x 10-15

0.49

654

1.36 x 10-15

0.80

654

1.49 x 10-15

1.25

654

1.70 x 10-15

1.80

654

4.22 x 10-15

2.03

654

5.37 x 10-15

3.04

654

6.87 x 10-15

3.44

654

8.30 x 10-15

 

 

 

 

Table 11

Vacancy-Impurity Binding Energies in Ag-Sn Alloys

 

Temperature (K)

Q (eV)

654

0.12

652

0.13

643

0.12

629

0.15

618

0.12