The interdiffusivity of Ag/Cu multi-layered films, which had been deposited onto glass substrates at 298, 233 or 153K, was deduced from the decay rate of the first satellite peak intensity around the 000 reflection. The films also exhibited several satellites in a high-angle region; thus indicating that they were not perfect monocrystalline films, but had in-plane domain structures with an alternating stacking of Ag(111) and Cu(111) planes parallel to the substrate. The interdiffusivity in films which had been deposited at 153K was some 2 orders of magnitude greater than that in films which had been deposited at 298K. At the same time, the grains in the deposited films increased in size with increasing substrate temperature. An activation energy of between 84 and 87kJ/mol was attributed to grain-boundary diffusion within the films. It was also shown that the apparent interdiffusivities in the multi-layers depended strongly upon structural changes, such as grain growth due to recrystallization.

O.Nittono, S.Ando: Thin Solid Films, 1996, 281-282[1-2], 124-7