Samples were implanted with 100 to 1800eV D ions in order to study implantation-driven permeation. It was found that the steady-state permeation flux was proportional to the square root of the incident D+ flux, when the latter was between 7 x 1013 and 1015/cm2s, the sample temperature was between 550 and 825K, and the ion energy was between 300 and 1500eV. It was suggested that implantation-driven permeation through the pure Al was controlled by the recombination of D at the target surface and by D diffusion at the other side. The average activation energy (table 20) was equal to 59.9kJ/mol.

T.Hayashi, K.Okuno, K.Yamanaka, Y.Naruse: Journal of Alloys and Compounds, 1992, 189[2], 195-9

Table 20

Implantation-Driven Permeation of D in Al