Empirical relationships were used to relate resistivity data to diffusivities and activation energies in thin films. The results for a Cr/Au structure agreed with published data on the interdiffusion of Cr and Au thin films at temperatures ranging from 350 to 450C. An analysis of Cr/Au resistivity data by means of the equations furnished the results:

D(cm2/s) = 1.2 x 10-7exp[-1.00(eV)/kT]

for Cr diffusion in Au, and

D(cm2/s) = 1.0 x 10-7exp[-1.06(eV)/kT]

for Au diffusion in Cr. The present results were checked by using Rutherford back-scattering spectrometry, and were found to be consistent with published data on grain boundary diffusion. The Rutherford back-scattering spectrometry data could be described by:

D(cm2/s) = 1.6 x 10-8exp[-0.94(eV)/kT]

for Cr diffusion in Au, and

D(cm2/s) = 7.1 x 10-9exp[-1.02(eV)/kT]

for Au diffusion in Cr. The diffusivity of Cr in Au at 442C was equal to 3.7 x 10-15cm2/s, and the diffusivity of Au in Cr at 442C was equal to 4.4 x 10-16cm2/s.

P.Madakson: Journal of Applied Physics, 1991, 70[3], 1380-4