Interdiffusion and intermetallic compound formation in Au/Nb bi-layer thin films during annealing at 200 to 450C were investigated. The films were prepared by electron beam deposition, such that the Nb film was 50nm thick and the Au film was 50 to 200nm thick. Interdiffusion in annealed specimens was monitored by resistivity depth-composition profiling and transmission electron microscopy. Interdiffusion between the films was detected et temperatures above 325C, in a vacuum of 0.0001Pa. The compound, Nb3Au2 (and some unidentified phases), formed during annealing at temperatures above 400C. The apparent diffusion coefficients, deduced from observed penetration depths after annealing at 350C, were: 3.5 x 10-15m2/s for Nb in Au and 8.6 x 10-15m2/s for Au in Nb.

M.Kitada: Thin Solid Films, 1994, 250[1-2], 111-4