Diffusion in thin films was studied by means of Rutherford back-scattering spectrometry at room temperature, or at temperatures of between 175 and 290C. The 1.5 to 2.0MeV He+ Rutherford back-scattering spectra were obtained with a resolution of 14 to 18keV. The spectra were converted into depth versus concentration profiles for both bulk and grain boundary diffusion. It was found that the activation energies for the grain boundary diffusion of Au into Cu films, or of Cu into Au films, ranged from 0.95 to 0.98eV. The activation energy for the grain boundary diffusion of Pt into Cu films was equal to 1.25eV.

A.N.Aleshin, B.S.Bokstein, V.K.Egorov, P.V.Kurkin: Thin Solid Films, 1996, 275[1-2], 144-7