The interdiffusion process was induced by ns pulses from an excimer laser. The Bi-based systems were made up of a Bi layer and an Sb or Ge layer. Configurations which had Bi as the surface layer or as the innermost layer were studied, and real-time reflectivity measurements were performed during irradiation in order to determine the process kinetics and times. Rutherford back-scattering spectrometry was used to measure the concentration depth profiles. It was shown that there was an interfacially initiated diffusion process in the case of the Bi-Sb system, and that the diffusion coefficients for this system, in the liquid phase, ranged from 10-5 to 10-6cm2/s. The Bi-Ge system exhibited little mixing, and the diffusion coefficients in the liquid phase were at least 2 orders of magnitude lower. The differences which were observed between the cases where Bi was the surface or innermost layer were attributed to the differing thermal responses of the systems.

T.Missana, C.N.Afonso, M.F.Da Silva: Applied Physics A, 1994, 59[6], 653-8