The response of the point defect and antistructure systems to ion bombardment was investigated by applying linear response methods to thin single crystals of ordered material which had been grown by means of molecular beam epitaxy. It was demonstrated that antisite evolution, as measured by using resistivity methods, quantitatively determined defect concentrations and diffusion in the bombarded region. New linear and non-linear response processes were considered as the antistructure system was driven from equilibrium. Due to the control which was achieved by tailoring the samples, it was possible to quantify the effects of bombardment under conditions which were quite beyond previous limits. It was shown that antistructure recovery accurately reflected local diffusivity, and this was exploited in order to reproduce quantitatively the radiation-enhanced diffusivities which had been measured in previous studies of root mean square atomic displacements. The dependences of radiation-enhanced diffusivity and vacancy concentration upon irradiation flux were also determined.

Antistructure and Point Defect Response in the Recovery of Ion-Irradiated Cu3Au. L.Wei, Y.S.Lee, R.S.Averback, C.P.Flynn: Physical Review Letters, 2000, 84[26], 6046-9