A source of Fe was deposited onto the surface of thermally oxidized Si wafers, and was diffused at 700 to 1100C in a N ambient. The Fe concentrations in the SiO2 and Si were measured by using total reflection X-ray fluorescence, deep-level transient spectroscopic and surface photo-voltage techniques. A 2-boundary diffusion model was applied to the experimental data in order to determine the diffusivity and segregation coefficient of Fe in the oxide. It was found that the Fe diffusivity in SiO2 obeyed the Arrhenius relationship, with an activation energy of 1.51eV. The Fe exhibited a strong tendency to segregate into the dioxide.

Diffusion of Iron in Silicon Dioxide. D.A.Ramappa, W.B.Henley: Journal of the Electrochemical Society, 1999, 146[10], 3773-7