Samples were prepared by the alternate evaporation of Ni and Ti on (111) Si substrates. Interlayer diffusion and solid-state reaction in the multi-layer films were then studied, at temperatures of between 523 and 623K, by means of Auger electron spectroscopic depth profiling and grazing-incidence X-ray diffractometry. The resultant data for Ni diffusion could be described by:

D (m2/s) = 3 x 10-11 exp[-120(kJ/mol)/RT]

and that for Ti diffusion could be described by:

D (m2/s) = 7 x 10-10 exp[-130(kJ/mol)/RT]

S.M.Tadayyon, O.Yoshinara, K.Tanaka: Japanese Journal of Applied Physics - 1, 1992, 31[7], 2226-32