Ions of Si (55keV) were implanted into 100nm-thick oxide layers which had been thermally grown onto crystalline Si to doses ranging from 1014 to 1017/cm2 at room temperature. The ions passed through the interface between the SiO2 layer and the Si substrate and generated defects in both the oxide layer and the Si substrate. Defect-related phenomena were characterized by using photoluminescence and electron spin resonance measurements. The former data showed that there existed a dose-window, for maximum intensity of the luminescence, which was related to radiative defects. The electron spin resonance data showed that the non-radiative defects changed from E’ centres to Pb centres as the dose was increased. It was concluded that the intensity was controlled by the density ratio of radiative to non-radiative defects which were introduced by implantation.

Effects of Si-Dose on Defect-Related Photoluminescence in Si-Implanted SiO2 Layers. H.B.Kim, T.G.Kim, J.H.Son, C.N.Whang, K.H.Chae, W.S.Lee, S.Im, J.H.Song: Journal of Applied Physics, 2000, 88[4], 1851-4