The diffusion of implanted Sn in the  phase was studied, at temperatures of between 873 and 1073K (table 151), by using a Rutherford back-scattering spectrometry technique. The results for samples with a lower impurity content showed that the diffusion coefficients obeyed an Arrhenius expression of the form:

D (m2/s) = 0.004 exp[-3.5(eV)/kT]

The results for samples with a higher Fe content indicated that the diffusion mechanism was affected by the impurity concentration.

R.A.Pérez, M.Behar, F.Dyment: Philosophical Magazine A, 1997, 75[4], 993-1004

 

 

 

Table 151

Diffusivity of Sn in -Ti

 

Temperature (K)

D (m2/s)

873

2.5 x 10-23

923

2.5 x 10-22

973

2.1 x 10-21

993

5.7 x 10-21

1023

2.4 x 10-20

1073

1.3 x 10-19

1098

3.2 x 10-19