An analysis was made of the Auger profiles of W/InP structures, before and after heat treatment. It was concluded that expansion of the W/InP interface had a clearly diffusional nature up to an annealing temperature of 500C. At that temperature, the grain boundary diffusivity was estimated to be between 10-17 and 3 x 10-17cm2/s.

G.S.Korotchenkov, V.A.Michailov: Semiconductor Science and Technology, 1996, 11[10], 1402-4