Film samples were irradiated with electrons of 0.65 to 2.5MeV, to doses of 3.56 x 1019/cm2, at temperatures below 10K. The irradiated samples were isochronally annealed, and the recovery of the irradiation damage was investigated by monitoring the residual electrical resistivity. It was found that a characteristic of the recovery was a large narrow stage that was centered at 100K. Its position was independent of the electron dose and electron energy. Only the height of this stage increased with decreasing dose and energy. The irradiation of these polycrystalline films was thought to create one predominant type of Frenkel defect, that annealed out in the recovery stage at 100K. By analogy with recovery in pure metals, this was attributed to the recovery of a close Frenkel pair. There was no evidence of a freely migrating defect.

Annealing of Defects in AuIn2 after Irradiation with Electrons at Low Temperatures I.Eppler, U.Dedek, F.Dworschak, W.Schilling: Journal of Physics - Condensed Matter, 1998, 10[19], 4195-9