Computer simulations of 20 to 30keV ion bombardment were performed, and the results were compared with published field-ion microscopic data. The simulations showed that the unusually high defect-production efficiencies which were detected by using field-ion microscopy were due to a surface effect which greatly increased defect production as compared to that in the crystal bulk. A comparison of field-ion microscopy and molecular dynamics results, for the clustering of vacancies and the formation of interstitial atoms, revealed a generally good agreement.

Defect Production in Tungsten: a Comparison between Field-Ion Microscopy and Molecular-Dynamics Simulations Y.Zhong, K.Nordlund, M.Ghaly, R.S.Averback: Physical Review B, 1998, 58[5], 2361-4