The annealing of defects in N2+- or Al+-implanted 3C-material was studied by using mono-energetic positron beams. In the case of as-implanted specimens, the mean size of the open volume of defects was estimated to be close to that of divacancies. On the basis of the annealing behavior of the characteristic value of the S-parameter which corresponded to the annihilation of positrons which were trapped by vacancy-type defects, the temperature range for the annealing of defects could be divided into 5 stages. The annealing behavior in stages I (20 to 500C), II (500 to 800C) and III (800 to 1006C) was identified with the agglomeration of vacancy-type defects due to the migration of C vacancies, Si vacancies and vacancy complexes (such as divacancies), respectively. Stages IV (1000 to 1200C) and V (1200 to 1400C) were attributed to the formation of extended defects and their recovery, respectively.

A.Uedono, H.Itoh, T.Ohshima, R.Suzuki, T.Ohdaira, S.Tanigawa, Y.Aoki, M.Yoshikawa, I.Nashiyama, T.Mikado, H.Okumura, S.Yoshida: Japanese Journal of Applied Physics - 1, 1997, 36[11], 6650-60